AP2311GN
f=1.0MHz
C iss
12
1000
100
10
10
I D = -1 A
DS = - 48 V
V
8
6
4
2
0
C oss
C rss
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.000
10.000
1.000
1
Duty factor=0.5
0.2
0.1
0.1
100us
1ms
0.05
PDM
t
0.01
0.100
T
0.01
10ms
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthja + Ta
100ms
1s
DC
Rthja = 270℃/W
T A =25 o C
0.010
Single Pulse
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
8
T j =25 o C
T j =150 o C
QG
-4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
