AP2311GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-60
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-
-0.04
200
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-1.8A
250 mΩ
300 mΩ
VGS=-4.5V, ID=-1.4A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-1A
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V
VGS=±20V
-
-1
-
240
-
VGS(th)
gfs
Gate Threshold Voltage
-3
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
2
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
-10
j
Drain-Source Leakage Current (T=70oC)
-
-
-25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
ID=-1A
-
6
10
Qgs
Qgd
td(on)
tr
VDS=-48V
-
1
-
VGS=-4.5V
-
3
-
VDS=-30V
-
8
-
ID=-1A
-
5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=30Ω
-
22
3
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
510
50
40
6.4
810
-
VDS=-25V
-
f=1.0MHz
-
-
f=1.0MHz
-
9.6
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-1.2A, VGS=0V
IS=-1A, VGS=0V,
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
30
38
-
-
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 270 ℃/W when mounted on
Min. copper pad.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
