AP2311GN
10
10
7.5
5
-10V
-7.0V
-5.0V
-4.5V
-10V
-7.0V
-5.0V
-4.5V
T A = 150 o
C
T A =25 o C
8
V
G = - 3 .0V
5
V
G = - 3 .0V
3
2.5
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
250
240
230
220
210
200
I D =-1.4A
T A =25 o C
I D =-1.8A
V
G =-10V
Ω
Ω
Ω
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
1.5
1.3
1.0
0.8
0.5
T j =25 o C
T j =150 o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
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A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
