AP2310GN
f=1.0MHz
C iss
14
1000
100
10
I D = 3 A
12
V DS = 30 V
10
8
V
V
DS =38V
DS =48V
6
C oss
C rss
4
2
0
1
5
9
13
17
21
25
29
0
3
6
9
12
15
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100.000
Duty factor=0.5
0.2
10.000
1.000
0.100
0.010
0.001
0.1
100us
1ms
0.1
0.05
PDM
0.01
t
10ms
100ms
1s
DC
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
T A =25 o C
Rthja = 270℃/W
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
