AP2310GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.05
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3A
-
90
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=5V, ID=3A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=±20V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120 mΩ
VGS(th)
gfs
Gate Threshold Voltage
3
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
5
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
-
10
Drain-Source Leakage Current (T=70oC)
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
ID=3A
6
10
Qgs
Qgd
td(on)
tr
VDS=48V
1.6
3
-
VGS=4.5V
-
VDS=30V
6
-
ID=1A
5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=30Ω
16
3
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
490
55
40
780
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=3A, VGS=0V,
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
ns
nC
25
26
-
-
Qrr
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
