AP2310GN
10
10
T A = 150 o C
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
4.5V
T A =25 o C
8
8
6
6
V G = 3.0 V
V G = 3.0 V
4
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
99
93
87
81
75
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = 3 A
I D = 2 A
T A =25 o C
V G =10V
Ω
Ω
Ω
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
3
2
1
0
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
