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AP12L02H 参数 Datasheet PDF下载

AP12L02H图片预览
型号: AP12L02H
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 83 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP12L02H/J
16
30
12
I
D
, Drain Current (A)
20
8
P
D
(W)
10
0
4
0
25
50
75
100
125
150
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thjc
)
100us
10
0.2
I
D
(A)
1ms
0.1
0.1
0.05
P
DM
0.02
1
10ms
100ms
1s
T
C
=25
o
C
Single Pulse
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance