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AP12L02H 参数 Datasheet PDF下载

AP12L02H图片预览
型号: AP12L02H
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 83 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP12L02H/J
21
T
C
=25 C
o
10V
8.0V
6.0V
18
T
C
=150
o
C
10V
8.0V
6.0V
I
D
, Drain Current (A)
14
I
D
, Drain Current (A)
12
5.0V
5.0V
6
7
V
GS
=4.5V
V
GS
=4.5V
0
0.0
1.0
2.0
3.0
4.0
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
2
I
D
=6A
T
C
=25
I
D
=6A
V
GS
=10V
80
Normalized R
DS(ON)
2
6
10
14
130
1.4
R
DS(ON)
(m
Ω
)
0.8
30
0.2
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature