BRIGHT
Microelectronics
Inc.
BM29F400T/BM29F400B
DC CHARACTERISTICS
TTL/NMOS Compatible
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
LI
I
IN
CC
Input Load Current
V
V
= Vss to V
,
±
1.0
m
A
CC
CC
= V Max.
LIT
LO
CC
CC
= V Max.,
A9 Input Load Current
Output Leakage Current
I
V
±1.0
mA
A9 = 12.5 V
OUT
CC
= Vss to V
I
V
V
,
±
1.0
m
A
CC
CC
= V Max.
(1)
CC
CC1
V
Active Current
I
40
mA
Byte
IL
IH
CE
OE
OE
= V ,
= V
Word
50
60
mA
mA
(2,3)
CC
CC
CC2
CC3
V
Active Current
I
I
IL
= V ,
IH
= V
CE
CC
CC
V
Standby Current
V
= V Max.,
1.0
1.0
0.8
mA
IH
CE
= RESET = V
CC
V
CC4
CC
CC
Standby Current
I
V
= V Max.,
mA
IL
RESET
RESET
= V
(
)
IL
V
Input Low Level
-0.5
2.0
V
V
V
V
V
IH
V
CC
Input High Level
V
+0.5
ID
V
CC
Voltage for Electronic
Output Low Voltage
Output High Voltage
V
= 5.0V
11.5
12.5
0.45
OL
V
OL CC CC
= 5.8 mA, V = V Min.
I
I
OH
V
OH
CC
CC
= -2.5 mA, V = V Min.
2.4
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
IH
at V .
The frequency component typically is less than 2 mA/MHz, with
OE
2. ICC active while Internal Algorithm (program or erase) is in progress.
3. Not 100% tested.
A Winbond Company
- 21 -
Publication Release Date: December 1999
Revision A2
WINBOND [ WINBOND ]
