ADVANCE INFORMATION
DC Electrical Characteristics
(Over the Operating Range)
Parameter
Vcc
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply
Current
Automatic CE Power-down
Current
−
CMOS Inputs
F=0
GND < V
I
< Vcc
GND < V
O
< Vcc, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
Vcc = 3.3V,
I
OUT
= 0mA,
CMOS level
Test Conditions
Supply Voltage
I
OH
=
−1
mA
I
OL
= 2 mA
WCMC1616V9X
WCMC1616V9X-70
Min.
Typ.
[8]
Max.
2.7
V
CC
- 0.4
0.4
0.8*V
CC
−0.4
−1
−1
13
2
100
V
CC
+ 0.4
0.4
+1
+1
17
3.5
525
3.3
Unit
V
V
V
V
V
µA
µA
mA
I
SB1
CE > V
CCQ
−
0.2V, CE
2
< 0.2V
V
IN
> V
CCQ
−
0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
CE > V
CCQ
−
0.2V, CE
2
< 0.2V
V
IN
> V
CCQ
−
0.2V or V
IN
< 0.2V,
f = 0, V
CC
=3.3V
µA
I
SB2
Automatic CE Power-down
Current
−
CMOS Inputs
80
150
µA
Capacitance
[10]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Thermal Resistance
[10]
Parameter
θ
JA
θ
JC
Description
Thermal Resistance (Junction to
Ambient)
Thermal Resistance (Junction to
Case)
Test Conditions
Still Air, soldered on a 3 x 4.5 inch, two-layer
printed circuit board
FBGA
55
17
Unit
°C/W
°C/W
Note:
10. Tested initially and after design or process changes that may affect these parameters.
Document #: 38-14027 Rev. **
Page 4 of 13
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
