Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum D.C. Ratings
Parameter
Symbol
Value
Unit
V
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 to + 4.6
Supply voltage relative to Vss
Short circuit output current
Power dissipation
VDD, VDDQ
IOUT
-0.5 to + 4.6
50
V
mA
W
PD
1.0
Operating temperature
Storage temperature
TOPT
0 to + 70
-55 to + 125
°C
°C
TSTG
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
peumanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Input High Voltage
Input Low Voltage
Symbol
VIH
Min
2.0
Max
Unit
V
Notes
2
VDDQ + 2.0
VIL
VSSQ -2.0
0.8
V
2
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Supply Voltage
Symbol
Min
3.0
Typ
3.3
Max
3.6
Unit
V
VDD, VDDQ
Input High Voltage, all inputs
Input Low Voltage, all inputs
VIH
VIL
2.0
-
-
VDD + 0.3
0.8
V
V
-0.3
Capacitance
(Ta = 25°C, f = 1MHZ)
Parameter
Symbol
Min
2.5
Typ
Max
Unit
pF
Notes
1
Input capacitance (All input pins except CLK pin)
CLK pin
Cin
CCLK
CI/O
3.75
5.0
4.0
6.5
2.5
4.0
3.25
5.25
pF
pF
1
1
Data input/output capacitance
Notes : 1. Capacitance measured with effective capacitance measuring method.
2. The overshoot and undershoot voltage duration is £ 3ns with no input clamp diodes.
Document : 1G5-0127
Rev2
Page4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
