VG36256401A
VG36256801A
Preliminary
VG36256161A
CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum D.C. Ratings
Parameter
Symbol
Value
Unit
V
Voltage on any pin relative to Vss
VIN, VOUT
VDD, VDDQ
IOUT
-0.5 to + 4.6
Supply voltage relative to Vss
Short circuit output current
Power dissipation
-0.5 to + 4.6
50
V
mA
W
PD
1.0
Operating temperature
Storage temperature
TOPT
0 to + 70
-55 to + 125
J¢
J¢
TSTG
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Input High Voltage
Symbol
VIH
Min
2.0
Max
Unit
V
Notes
1
VDD + 0.3
Input Low Voltage
VIL
-0.3
0.8
V
2
Note: 1. Overshoot limit: V (max)=V
+2.0V with a pulse with < 3ns
DDQ
IH
2. Urdershoot limit: V (min)=V
-2.0V with a pulse with < 3ns and -1.5v with a pulse < 5ns
SSQ
IL
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Symbol
Min
3.0
Typ
3.3
Max
3.6
Unit
V
Supply Voltage
VDD, VDDQ
Input High Voltage, all inputs
Input Low Voltage, all inputs
VIH
VIL
2.0
VDD + 0.3
0.8
V
V
С
С
-0.3
Capacitance
(Ta=25°C, f = 1MHZ)
Parameter
Symbol
C11
Min
Max
Unit
pF
Notes
1
Input capacitance (CLK)
2.5
2.5
4
5
Input capacitance (all input pins except data
pins.)
C12
pF
1
Data input/output capacitance
CI/O
4.0
6.5
pF
1
Notes : 1. Capacitance measured with effective capacitance measuring method.
Document : 1G5-0155
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
