VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
VIS
DC Characteristics(Recommended Operating Conditions unless otherwise noted)
VG3617801CT
-10
Parameter
Symbol
ICC1
Test Conditions
Burst length=1
-8H
-8L
Unit
mA
Notes
1,2
Min Max Min Max Min Max
Operating current
CL=3
CL=2
90
90
85
t
³ t
(MIN.),Io=0mA
One bank active
CKE £ V IL(MAX.) CK
85
85
80
RC RC
Precharge standby
current in power
down mode
ICC2
P
3
2
3
2
3
2
mA
mA
t
=15ns
ICC2PS
CKE £ V IL(MAX)tCK=¥
Precharge standby
current in Nonpower
down mode
ICC2
N
30
30
30
CKE ³ V IH(MIN.)tCK=15ns
CS ³ V
IH(MIN.)
Input signals are changed.
one time during 30ns.
ICC2NS
6
6
6
CKE ³ V IH(MIN.), tCK=¥
CLK £ V
IL(MAX.)
Input signals are stable.
Active standby current Icc3
in power down mode
P
3
2
3
2
3
2
mA
mA
CKE £ V IL(MAX.),tCK=15ns
Icc3PS
CKE £ V IL(MAX.),tCK=¥
Active standby current Icc3
in nonpower down
mode
N
30
30
30
CKE ³ V IL(MAX.),tCK=15ns
CS ³ V
IL(MIN.)
Input signals are changed
one time during 30ns
Icc3NS
15
15
15
CKE ³ V IH(MIN.) tCK=¥
CLE £ V
IL(MAX.)
Input signals are stable.
Operating current
(Burst mode)
Icc4
CL=3
CL=2
120
115
120
105
105
100
mA
mA
1,2
2
t
³ t
(MIN.),Io=0mA
CK CK
Burst length=4
Refresh current
Icc5
Icc6
CL=3
CL=2
110
105
2
110
105
2
100
95
2
t
³ t
RC RC
(MIN.)
Self refresh current
mA
uA
CKE £ 0.2V
Input leakage current ILI
-5
-5
5
-5
-5
5
-5
-5
5
V
³ 0 ,V £ V
+0.3V
in
in
Pins not under test=0V
³ 0 , V £ V
DD
Output leakage current ILO
5
5
5
uA
V
+0.3V
OUT
OUT
DD
DQ# in H-Z., Dout disabled
IOL=2mA
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
0.4
V
V
IOH=2mA
2.4
2.4
2.4
Notes 1.I depends on output loading and cycle rates. Specified values are obtained with the output open.
cc
2.I is measured on condition that addresses are changed only one time during t
.
CK(MIN.)
cc
Document:1G5-0133
Rev.1
Page5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
