VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
Voltage on any pin relative to Vss
VIN,VOUT
-1.0 to +4.6
Supply voltage relative to Vss
Short circuit output current
Power dissipation
V
DD,VDDQ
-1.0 to +4.6
50
V
mA
W
IOUT
PD
1.0
Operating temperature
Operating temperature
TOPT
TSTG
0 to + 70
-55 to + 125
¢J
¢J
Recommended DC Operating Conditions
Parameter
Supply Voltage
Symbol
Min
Typ
3.3
Max
3.6
Unit
V
Note
VDD
VIH
VIL
3.0
2.0
Input High Voltage, all inputs
Input Low Voltage, all inputs
°–
°–
VDD+0.3
0.8
V
V
1
2
-0.3
Note 1.Overshoot limit : V
=V
+2.0V with a pulse width < 3ns
DDQ
IH(MAX.)
2.Undershoot limit : V =V
-2.0V with a pulse < 3ns and -1.5V with a pulse < 5ns
SSQ
IL
Capacitance
(Ta=25¢J,f=1MHZ)
Parameter
Input capacitance(CLK)
Symbol
C11
Min
2.5
Max
4
Unit
pF
Input capacitance(all input pins except data pins)
Data input/output capacitance
C12
2.5
4.0
5
pF
pF
CI/O
6.5
Document:1G5-0133
Rev.1
Page4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
