Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
Voltage on any pin relative to Vss
VIN,VOUT
VDD,VDDQ
IOUT
-1.0 to +4.6
Supply voltage relative to Vss
Short circuit output current
Power dissipation
-1.0 to +4.6
50
V
mA
W
PD
1.0
Operating temperature
Storage temperature
TOPT
0 to + 70
-55 to + 125
¢J
¢J
TSTG
Recommended DC Operating Conditions
Parameter
Supply Voltage
Symbol
Min
Typ
3.3
Max
3.6
Unit
V
Note
VDD
VIH
VIL
3.0
2.0
Input High Voltage, all inputs
Input Low Voltage, all inputs
VDD+0.3
0.8
V
V
1
2
С
С
-0.3
Note 1.Overshoot limit : V
=V
+2.0V with a pulse width < 3ns
DDQ
IH(MAX.)
2.Undershoot limit : V =V
-2.0V with a pulse < 3ns and -1.5V with a pulse < 5ns
SSQ
IL
Parameter
Description
Min.
Max.
Unit
Note
I
Input Leakage Current
-5
5
mA
IL
(0V £ V £ V
IN
All other pins not under test = OV)
DD
I
Output Leakage Current
-5
5
mA
OL
Output disable, (0V £ V
£ V
)
OUT
LVTTL Output ”H” Level Voltage
(l = -2mA)
DDQ
V
2.4
-
-
V
V
OH
OUT
V
LVTTL Output ”L” Level Voltage
(l = 2mA)
0.4
OL
OUT
Document:1G5-0160
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
