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V23990-P868-F48-PM 参数 Datasheet PDF下载

V23990-P868-F48-PM图片预览
型号: V23990-P868-F48-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 809 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P868-F49/F48-PM  
preliminary datasheet  
Output Inverter  
Figure 9  
Output inverter IGBT  
Figure 10  
Output inverter IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1
1
tdoff  
tdon  
tdoff  
tf  
tf  
tr  
0,1  
0,1  
tdon  
tr  
0,01  
0,01  
0,001  
0,001  
I
C (A)  
R G ( Ω )  
150  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
inductive load  
inductive load  
Tj =  
VCE  
VGE  
Rgon  
Rgoff  
Tj =  
VCE  
VGE  
IC =  
150  
600  
15  
32  
32  
°C  
150  
600  
15  
°C  
=
=
=
=
=
=
V
V
V
V
A
15  
Figure 11  
Typical reverse recovery time as a  
function of collector current  
Output inverter FRED  
Figure 12  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
Output inverter FRED  
trr = f(IC)  
trr = f(Rgon)  
0,75  
0,8  
trr  
trr  
0,6  
0,45  
0,3  
0,6  
0,4  
0,2  
trr  
trr  
0,15  
0
0
0
0
R
( Ω )  
150  
I C (A)  
5
10  
15  
20  
25  
30  
30  
60  
90  
120  
gon  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
15  
°C  
V
V
25/150  
600  
15  
°C  
V
A
=
=
Rgon  
=
VGE =  
32  
15  
V
copyright Vincotech  
6
Revision: 1