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V23990-P868-F48-PM 参数 Datasheet PDF下载

V23990-P868-F48-PM图片预览
型号: V23990-P868-F48-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 809 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P868-F49/F48-PM  
preliminary datasheet  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
3,5  
3,5  
Eon  
3
3
Eon  
2,5  
2
2,5  
2
Eoff  
Eon  
Eon:  
Eoff  
1,5  
1
1,5  
1
Eoff  
Eoff  
0,5  
0
0,5  
0
R G( Ω )  
150  
I C (A)  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
inductive load  
Tj =  
inductive load  
Tj =  
°C  
°C  
25/150  
600 V  
25/150  
600 V  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
15 V  
32 ꢁ  
32 ꢁ  
15 V  
15 A  
Rgon  
Rgoff  
=
=
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter IGBT  
Typical reverse recovery energy loss  
as a function of collector current  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
Erec = f(IC)  
1,8  
1,5  
1,2  
0,9  
0,6  
0,3  
0
Erec  
1,5  
1,2  
0,9  
0,6  
0,3  
Erec  
Erec  
Erec  
0
0
R G( Ω )  
I C (A)  
5
10  
15  
20  
25  
30  
0
30  
60  
90  
120  
150  
inductive load  
Tj =  
inductive load  
Tj =  
°C  
V
V
°C  
V
V
25/150  
600  
25/150  
600  
15  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
15  
Rgon  
=
32 ꢁ  
A
15  
copyright Vincotech  
5
Revision: 1