V23990-P868-F49/F48-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE [V] or
VGS [V]
Tj
Min
Max
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0005
15
V
V
1,84
2,23
15
0
1200
0
µA
nA
ꢁ
200
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
86
84
17,8
23,6
201
264
81
130
0,95
1,40
0,83
1,37
Rise time
ns
td(off)
tf
Turn-off delay time
Rgon=32ꢁ
Rgoff=32ꢁ
15
600
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
900
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
80
Reverse transfer capacitance
Gate charge
55
15
960
15
93
nC
Thermal grease
thicknessꢀ50um
( = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,47
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,84
1,77
14,8
16,2
289
447
1,54
2,68
92
2,4
VF
IRRM
trr
Diode forward voltage
15
15
V
Α
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32ꢁ
15
600
μC
di(rec)max
/dt
A/μs
mWs
59
Erec
Tj=150°C
1,08
2,13
Thermal grease
thicknessꢀ50um
( = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
Tol. 5%
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kꢁ
%/K
mW
K
ΔR/R
P
R100=1486ꢁ
210
4000
B(25/100)
Tol. 3%
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