V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
25
25
Qrr
20
20
15
10
5
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Qrr
15
10
Qrr
Tj = 25°C
Tj = 25°C
Qrr
5
0
0
0
I C (A)
R g on ( Ω)
0
30
60
90
120
150
4
8
12
16
20
At
At
At
Tj =
VCE
VGE
25/150
600
±15
4
Tj =
VR =
IF =
25/150
600
°C
V
°C
V
A
V
=
=
V
75
Rgon
=
VGE =
ꢁ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
100
100
80
60
40
20
80
Tj = Tjmax -25°C
Tj = Tjmax - 25°C
IRRM
60
IRRM
IRRM
IRRM
Tj = 25°C
Tj = 25°C
40
20
0
0
0
I C (A)
R gon ( Ω )
4
8
12
16
20
0
30
60
90
120
150
At
At
Tj =
VCE
VGE
25/150
600
±15
4
Tj =
VR =
IF =
25/150
°C
V
°C
V
A
V
=
600
75
=
V
Rgon
=
VGE =
ꢁ
±15
copyright Vincotech
7
Revision: 5.1
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