V23990-K429-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
V
GS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,03
0,93
0,92
0,79
0,004
0,005
1,35
VF
Vto
rt
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢁ
0,1
1,1
Ir
1500
mA
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,90
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
0,1
600
VGE(th) VCE=VGE
0,003
75
V
V
1,6
1,97
2,42
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
ꢁ
20
10
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
173
189
30
Rise time
40
ns
284
359
78
120
6,51
10,61
4,25
6,68
td(off)
tf
Turn-off delay time
Rgoff=4ꢁ
Rgon=4ꢁ
±15
600
75
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
4400
290
235
570
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
nC
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,58
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,01
2,05
57,3
68,4
310
2,8
VF
IRRM
trr
75
75
V
A
Peak reverse recovery current
Reverse recovery time
ns
602
6,29
14,8
1733
384
2,21
5,51
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=4ꢁ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,75
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢁ
%
∆R/R R100=1670 ꢁ
-3
3
P
1670,313
ꢁ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech PTC Reference
E
copyright Vincotech
3
Revision: 5.1