V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
3000
3000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
2500
2000
1500
1000
500
2500
2000
1500
1000
500
0
0
I C (A)
R gon ( Ω )
0
30
60
90
120
150
0
4
8
12
16
20
At
At
Tj =
VCE
VGE
25/150
Tj =
VR =
IF =
25/150
600
°C
V
°C
V
A
V
=
=
600
±15
4
V
75
Rgon
=
VGE =
ꢁ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
101
1
t p (s)
t p (s)
At
At
tp / T
0,58
tp / T
0,75
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,11
Tau (s)
1,0E+00
1,5E-01
3,6E-02
7,3E-03
4,9E-04
R (C/W)
0,04
Tau (s)
5,1E+00
9,5E-01
2,0E-01
6,1E-02
1,1E-02
0,33
0,12
0,08
0,38
0,04
0,12
0,02
0,07
copyright Vincotech
8
Revision: 5.1
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