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V23990-K429-A40-0B-PM 参数 Datasheet PDF下载

V23990-K429-A40-0B-PM图片预览
型号: V23990-K429-A40-0B-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Trench Fieldstop IGBT4 technology]
分类和应用: 双极性晶体管
文件页数/大小: 17 页 / 1213 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K429-A40-PM  
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7  
Figure 17  
D1,D2,D3,D4,D5,D6,D7 FWD  
Figure 18  
D1,D2,D3,D4,D5,D6,D7 FWD  
Typical rate of fall of forward  
and reverse recovery current as a  
function of collector current  
dI0/dt,dIrec/dt = f(IC)  
Typical rate of fall of forward  
and reverse recovery current as a  
function of IGBT turn on gate resistor  
dI0/dt,dIrec/dt = f(Rgon  
)
3000  
3000  
dI0/dt  
dI0/dt  
µ
µ
µ
µ
dIrec/dt  
dIrec/dt  
2500  
2000  
1500  
1000  
500  
2500  
2000  
1500  
1000  
500  
0
0
I C (A)  
R gon ( )  
0
30  
60  
90  
120  
150  
0
4
8
12  
16  
20  
At  
At  
Tj =  
VCE  
VGE  
25/150  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
°C  
V
A
V
=
=
600  
±15  
4
V
75  
Rgon  
=
VGE =  
±15  
Figure 19  
T1,T2,T3,T4,T5,T6,T7 IGBT  
Figure 20  
D1,D2,D3,D4,D5,D6,D7 FWD  
IGBT transient thermal impedance  
as a function of pulse width  
ZthJH = f(tp)  
FWD transient thermal impedance  
as a function of pulse width  
ZthJH = f(tp)  
101  
101  
100  
100  
D = 0,5  
0,2  
D = 0,5  
0,2  
10-1  
10-1  
0,1  
0,1  
0,05  
0,02  
0,01  
0,005  
0.000  
0,05  
0,02  
0,01  
0,005  
0.000  
10-2  
10-2  
10-5  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
1011  
10-4  
10-3  
10-2  
10-1  
100  
101  
1
t p (s)  
t p (s)  
At  
At  
tp / T  
0,58  
tp / T  
0,75  
D =  
D =  
RthJH  
=
RthJH =  
K/W  
K/W  
IGBT thermal model values  
FWD thermal model values  
R (C/W)  
0,11  
Tau (s)  
1,0E+00  
1,5E-01  
3,6E-02  
7,3E-03  
4,9E-04  
R (C/W)  
0,04  
Tau (s)  
5,1E+00  
9,5E-01  
2,0E-01  
6,1E-02  
1,1E-02  
0,33  
0,12  
0,08  
0,38  
0,04  
0,12  
0,02  
0,07  
copyright Vincotech  
8
Revision: 5.1