V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
10000
10000
µ
µ
µ
dI0/dt
µ
dI0/dt
dIrec/dt
dIrec/dt
8000
6000
4000
2000
0
8000
6000
4000
2000
0
0
10
20
30
40
50
60
70
)
0
20
40
60
80
100
I C (A)
R gon
(
Ω
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/151
25/150
°C
V
25/151
25/150
600
50
°C
V
A
V
=
600
±15
16
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1010
1
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
tp / T
0,75
tp / T
0,93
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,03
Tau (s)
1,6E+01
R (C/W)
0,05
Tau (s)
3,4E+00
0,09
1,2E+00
2,1E-01
7,1E-02
1,5E-02
0,10
5,9E-01
1,2E-01
3,7E-02
8,1E-03
9,0E-04
0,29
0,37
0,24
0,25
0,09
0,13
0,04
Copyright by Vincotech
8
Revision: 1.1