V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
12
12
10
8
Eon High T
Eon High T
9
Eon Low T
Eon Low T
6
6
Eoff High T
Eoff Low T
Eoff High T
4
3
Eoff Low T
2
0
0
0
16
32
48
64
80
0
25
50
75
I C (A)
100
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/1501
25/1501
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
16
600
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
16
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
8
6
4
2
0
8
6
4
2
0
Erec
Erec
Erec
Erec
0
25
50
75
100
0
16
32
48
64
80
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/151
25/150
°C
V
25/151
25/150
°C
V
V
A
=
=
=
=
600
±15
16
600
±15
50
V
Rgon
=
ꢀ
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5
Revision: 1.1
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