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V23990-K428-A60-1B-PM 参数 Datasheet PDF下载

V23990-K428-A60-1B-PM图片预览
型号: V23990-K428-A60-1B-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Mitsubishi Generation 6.1 technology]
分类和应用:
文件页数/大小: 18 页 / 2393 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K428-A60-PM  
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7  
Figure 9  
T1,T2,T3,T4,T5,T6,T7 IGBT  
Figure 10  
T1,T2,T3,T4,T5,T6,T7 IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1,00  
0,10  
0,01  
0,00  
1,00  
tdoff  
tdoff  
tdon  
tf  
0,10  
tf  
tr  
tdon  
0,01  
tr  
0,00  
0
16  
32  
48  
64  
80  
0
25  
50  
75  
100  
I C (A)  
R G ( )  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
151  
600  
±15  
16  
°C  
V
151  
600  
±15  
50  
°C  
V
V
A
=
=
=
=
V
Rgon  
Rgoff  
=
=
16  
Figure 11  
D1,D2,D3,D4,D5,D6,D7 FWD  
Figure 12  
D1,D2,D3,D4,D5,D6,D7 FWD  
Typical reverse recovery time as a  
function of collector current  
trr = f(IC)  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
trr = f(Rgon  
)
1,5  
1,2  
0,9  
0,6  
0,3  
0,0  
1,5  
1,2  
0,9  
0,6  
0,3  
trr  
trr  
trr  
trr  
0,0  
0
0
25  
50  
75  
100  
16  
32  
48  
64  
80  
I C (A)  
R gon ( )  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
°C  
V
25/150  
600  
50  
°C  
V
A
V
=
600  
±15  
16  
=
V
Rgon  
=
VGE =  
±15  
Copyright by Vincotech  
6
Revision: 1.1