30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 5
T1,T2,T3,T4,T5,T6 IGBT
Figure 6
T1,T2,T3,T4,T5,T6 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
12
12
Eon High T
Eon High T
9
9
Eoff High T
Eon Low T
6
6
Eon Low T
Eoff High T
Eoff Low T
3
3
Eoff Low T
0
0
0
25
50
75
100
0
8
16
24
32
40
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
8
Figure 7
D1,D2,D3,D4,D5,D6 FWD
Figure 8
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
6
5
3
2
0
6
5
3
2
0
Erec
Erec
Erec
Erec
0
25
50
75
100
0
8
16
24
32
40
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
V
Rgon
=
Ω
A
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5
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