30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D7,D8
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,12
1,07
0,89
0,76
2
1,21
VF
Vto
rt
Forward voltage
100
100
100
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
3
0,05
Ir
1600
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
0,37
0,24
Phase-Change
Material
K/W
T1,T2,T3,T4,T5,T6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,1
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0017
50
V
V
1,6
1,86
2,3
15
0
0,018
600
1200
0
mA
nA
Ω
20
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
110
23
Rise time
26
ns
210
287
61
116
2,97
4,44
2,55
4,54
td(off)
tf
Turn-off delay time
Rgoff=8 Ω
Rgon=8 Ω
±15
600
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
2770
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
205
Reverse transfer capacitance
Gate charge
160
±15
960
50
240
nC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,58
0,38
Phase-Change
Material
K/W
D1,D2,D3,D4,D5,D6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,35
2,01
2
52,29
61,9
267
439,5
4,3
8,86
2183
758
2,05
VF
IRRM
trr
Diode forward voltage
50
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Rgon=8 Ω
±15
600
µC
di(rec)max
/dt
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
1,67
3,66
Erec
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,95
0,63
Phase-Change
Material
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
22000
Ω
%
∆R/R R100=1486 Ω
-5
5
P
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B(25/100)
B-value
K
Vincotech NTC Reference
B
Copyright by Vincotech
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