UM4599
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
10000
μ
ID=-250 A
1.2
Ciss
1000
1
C
oss
0.8
0.6
0.4
100
10
Crss
-60
-20
20
60
100
140
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
10
VDS=-48V
VDS=-30V
8
6
4
2
0
1
0.1
VDS=-12V
VDS=-10V
Pulsed
TA=25°C
ID=-3.5A
0.01
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
0
2
4
6
Qg, Total Gate Charge(nC)
8
10
12
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4.5
4
100
10
μ
100 s
RDS(ON)
Limited
3.5
3
1ms
2.5
2
10ms
1
100m
1s
1.5
1
0.1
0.01
TA=25°C, VGS=-10V
TA=25°C, Tj=150°C, VGS=-10V
θ
DC
0.5
0
θJA
=78°C/W
R
JA=78°C/W, Single Pulse
25
50
75
100
125
150
175
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
8
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
