UM4599
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
10000
μ
ID=250 A
1.2
Ciss
1000
1
0.8
C
oss
100
10
0.6
0.4
Crss
-60
-20
20
60
100
140
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
1
10
VDS=48V
VDS=30V
8
6
4
2
0
VDS=12V
0.1
0.01
VDS=10V
Pulsed
Ta=25°C
ID=4.5A
0
2
4
6
8
10
12
14
16
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
5
4
3
2
1
0
100
10
RDS(ON)
Limite
μ
100 s
1ms
1
10ms
100m
1s
0.1
0.01
TA=25°C, VGS=10V
θJA
=78°C/W
TA=25°C, Tj=150°C, VGS=10V
θJA
DC
R
R
=78°C/W,Single Pulse
25
50
75
100
125
150
175
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
5
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
