CHK080A-SRA
80W Power Packaged Transistor
Maximum Gain & Stability Characteristics
The device is composing by 2 independent transistors.
Each transistor has the following parameters.
Tcase= +25°C, CW mode, VDS=50V, ID_Q=600mA (300mA on each transistor)
40
35
4.0
3.0
2.0
1.0
0.0
Maximum Gain
30
25
20
15
10
K Factor
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
Frequency(GHz)
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
6/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
