CHK080A-SRA
80W Power Packaged Transistor
Typical Performance on Demonstration Board (Ref. 61500192)
Calibration and measurements are done on the connector reference accesses of the
demonstration boards
Tcase = +25°C, Pulsed mode (1)
Measured Id, Gain, Pout & PAE
F = 3GHz, VDS = 50V, ID_Q = 600mA
55
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
Pulsed mode at 3GHz
Pout
PAE
Id
Gain
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Input Power (dBm)
Measured Gain, Pout & PAE
Pin = 39dBm, VDS = 50V, ID_Q = 600mA
60
58
56
54
52
50
48
46
44
42
40
38
36
34
32
30
20
19
18
17
16
15
14
13
12
11
10
9
Pulsed mode
PAE
Pout
Gain
8
7
6
5
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
Frequency(GHz)
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
8/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
