80W Power Packaged Transistor
CHK080A-SRA
RF Characteristics (Pulsed)
Tcase= +25°C, Pulsed mode (1), F=3GHz, VD=50V, ID_Q=600mA (ID_Q =300mA on each transistor)
Symbol
GSS
Parameter
Small Signal Gain
Min
15
Typ
17
Max
Unit
dB
W
PSAT
Saturated Output Power
80
100
65
PAE
Max Power Added Efficiency
55
%
GPAE_MAX Associated Gain at Max PAE
13
dB
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB. The typical performance
achievable in more than 20% frequency band around 3GHz was demonstrated using the
reference board 61500192 presented hereafter.
Absolute Maximum Ratings
Tcase= +25°C(1), (2), (3)
Symbol
VDS
Parameter
Drain-Source Voltage
Rating
60
Unit
V
Note
(6)
VGS_Q
IG_MAX
IG_MIN
ID_MAX
PIN
Gate-Source Voltage
-10, +2
150
V
Maximum Gate Current in forward mode
Maximum Gate Current in reverse mode
Maximum Drain Current
mA
mA
A
-12
(4)
(5)
12
Maximum Input Power (typical)
Junction Temperature
41
dBm
°C
Tj
220
TSTG
TCase
Storage Temperature
-55 to +150
See note
°C
(4)
Case Operating Temperature
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) Max junction temperature must be considered
(5) @3GHz - Linked to and limited by IG_MAX & IG_MIN values
(6)
V
GS_Q
max limited by ID_MAX and IG_MAX values
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
3/14
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
