X-band High Power Amplifier
CHA8100
Typical measured characteristics
Measurements on Jig:
Vc = 9V, VTTL=5V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20%
20
15
10
5
dBS21
dBS11
dBS22
0
-5
-10
-15
-20
-25
8.5
8.8
9.0
9.3
9.5
9.8
10.0 10.3 10.5 10.8 11.0
Frequency ( GHz)
Gain/Input & Output Return losses (dB). Temperature:+20°C
27
25
23
21
19
17
15
13
11
9
85°C
25°C
-40°C
7
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Linear Gain versus frequency and temperature
Ref. : DSCHA81000069 - 10 Mar 10
3/12
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
