X-band High Power Amplifier
CHA8100
Chip Mechanical Data and Pin references
1
12
Units: µm
Chip width and length are given with a tolerance of ±35µm
Chip thickness = 100µm +/- 10 µm
RF pads (1, 12) = 96 x 196µm²
DC pads (2, 3, 4, 5, 6, 7, 9,10, 14, 15, 17, 18, 19, 20, 21, 22) = 96 x 96µm²
DC pads (8, 16) = 192 x 96µm²
DC pads (11, 13) = 288 x 96µm²
Pin number
1
Pin name
IN
Description
Input RF
7, 9, 15, 17
2, 22
C1, C2
TI
Collector current control voltage
TTL input
4, 20
5, 19
6, 10, 14, 18
3, 8, 11, 13, 16, 21
TO9
TO8
GND
V,Vc1,Vc2
OUT
TTL output when Vcx=9V
TTL output Vcx=8V
Ground (NC)
Power supply voltage
Output RF
Specifications subject to change without notice
12
Ref. : DSCHA81000069 - 10 Mar 10
9/12
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
