X-band High Power Amplifier
CHA8100
Electrical Characteristics
Tamb = 25°C, Vc=9V, Ic (Quiescent) = 2.1A, Pulse wi dth=100µs, Duty cycle = 20%
Symbol
F_op
Parameter
Operating frequency
Min
9
Typ
Max
Unit
GHz
dB
10.5
G_lin
Linear gain (9 to 10GHz)
Linear gain variation versus temperature
Input Return Loss
17
18.5
-0.025
-9
G_lin_T
RL_in
dB/°C
dB
RL_out
P_sat
Output Return Loss
-15
dB
Saturated output power
41
dBm
dB/°C
P_sat_T
Saturated output power variation versus
temperature
-0.01
P_3dBc
Output power @ 3dBc (3)
39.5
35
8
40.5
40
dBm
%
PAE_3dBc Power Added Efficiency @ 3dBc
Vc
Ic
Power supply voltage (3)
Power supply quiescent current (1)
TTL input voltage
9
5
V
2.1
A
TI
0
V
I_TI
Vctrl
Ictrl
Zctr
Top
TTL input current
0.7
5
mA
V
Collector current control voltage
Control supply current
22
350
mA
Ohm
°C
Vctrl input port impedance (2)
Operating temperature range
-40
+85
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vc
Parameter
Compression level (2 & 3)
Values
Unit
dB
V
8
Power supply voltage (4)
10
Ic
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature (5)
Storage temperature range
3
A
Ic_sat
Vctrl
Tj
4
6.5
A
V
175
°C
°C
Tstg
-55 to +125
(1)
(2)
Operation of this device above anyone of these parameters may cause permanent damage.
For higher compression the level limit can be raised by decreasing the voltage Vc using the
rate 0.5 V / dBc
(3)
(4)
(5)
VC=9V, Temperature=-40°C, Output VSWR=2:1
Without RF input power
Equivalent Thermal resistance to Backside: 6°C /W
Ref : DSCHA81000069 - 10 Mar 10
2/12
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
