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HV300LG 参数 Datasheet PDF下载

HV300LG图片预览
型号: HV300LG
PDF下载: 下载PDF文件 查看货源
内容描述: 热插拔,浪涌电流限幅控制器 [Hotswap, Inrush Current Limiter Controllers]
分类和应用: 电源电路电源管理电路光电二极管控制器
文件页数/大小: 6 页 / 79 K
品牌: SUPERTEX [ Supertex, Inc ]
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HV300/HV310  
Electrical Characteristics (VIN=-10V to -90V, -40°C TA +85°C unless otherwise noted)  
Symbol  
Parameters  
Min  
Typ  
Max  
Unit  
Conditions  
Supply (Referenced to VDD pin)  
VEE  
IEE  
Supply Voltage  
-90  
-10  
650  
400  
V
Supply Current  
550  
330  
µA  
µA  
VEE = -48V, Mode = Limiting  
VEE = -48V, Mode = Standby  
IEE  
Standby Mode Supply Current  
OV and UV Control (Referenced to VEE pin)  
VUVH  
VUVL  
VUVHY  
IUV  
UV High Threshold  
UV Low Threshold  
UV Hysteresis  
1.26  
1.16  
100  
V
V
Low to High Transition  
High to Low Transition  
mV  
nA  
V
UV Input Current  
OV High Threshold  
OV Low Threshold  
OV Hysteresis  
1.0  
VUV = VEE + 1.9V  
VOVH  
VOVL  
VOVHY  
IOV  
1.26  
1.16  
100  
Low to High Transition  
High to Low Transition  
V
mV  
nA  
OV Input Current  
1.0  
60  
VOV = VEE + 0.5V  
Current Limit (Referenced to VEE pin)  
VSENSE  
Current Limit Threshold Voltage  
40  
50  
10  
mV  
VUV = VEE + 1.9V,  
VOV = VEE + 0.5V  
Gate Drive Output (Referenced to VEE pin)  
VGATE  
Maximum Gate Drive Voltage  
9.0  
11  
V
VUV = VEE + 1.9V,  
VOV = VEE + 0.5V  
IGATEUP  
Gate Drive Pull-Up Current  
500  
µA  
VUV = VEE + 1.9V,  
VOV = VEE + 0.5V,  
IGATEDOWN  
Gate Drive Pull-Down Current  
40  
mA  
VUV = VEE, VOV = VEE + 0.5V  
Timing Control – Test Conditions: C =100µF, CRAMP=10nF, VUV = VEE+1.9V, VOV= VEE+0.5V, External MOSFET is IRF530*  
IRAMP  
tPOR  
Ramp Pin Output Current  
10  
µA  
ms  
µs  
ms  
ms  
V
VSENSE = 0V  
(Note 1)  
Time from UV to Gate Turn On  
2.0  
tRISE  
Time from Gate Turn On to VSENSE Limit  
Duration of Current Limit Mode  
400  
tLIMIT  
5.0  
0.8  
tPWRGD  
VRAMP  
Time from Current Limit to PWRGD  
Voltage on Ramp Pin in Current Limit Mode  
5.0  
3.6  
(Note 2)  
Power Good Output (Referenced to VEE pin)  
VPWRGD  
VPWRGD  
Power Good Pin Breakdown Voltage  
Power Good Pin Output Low Voltage  
90  
V
V
0.5  
IPWRGD = 1mA  
Dynamic Characterstics  
tGATEHLOV  
tGATEHLUV  
OV Delay  
UV Delay  
500  
500  
ns  
ns  
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.  
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET.  
*IRF530 is a registered trademark of International Rectifier.  
VGS(th) = 3V for an IRF530.  
2