STN4426
N Channel Enhancement Mode MOSFET
8.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
20
V
V
0.4
1.0
±100
1
Gate Leakage Current
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=20V,VGS=0V
uA
A
10
TJ=85℃
On-State Drain
Current
V
DS≧5V,VGS=10V
ID(on)
6
VGS=4.5V,ID=8.0A
VGS=2.5V,ID=7.0A
VGS=1.8V,ID=3.0A
22
26
32
28
38
42
Drain-source On-
Resistance
RDS(on)
mΩ
Forward
Transconductance
gfs
VDS=15V,ID=5.0AV
IS=1.0A,VGS=0V
30
S
V
Diode Forward Voltage
VSD
0.8
1.2
13
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
10
1.4
2.1
VDS=10V,VGS=4.5V
Gate-Source Charge
ID≡5.0A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
600
120
Output Capacitance
VDS ==10V,VGS=0V
f=1MHz
Coss
Reverse
TransferCapacitance
Crss
100
15
25
td(on)
tr
Turn-On Time
Turn-Off Time
VDD=10V,RL=10Ω
ID=1A,VGEN=4.5V
RG=6Ω
40
45
30
60
65
40
nS
td(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
STANSON [ STANSON TECHNOLOGY ]
