STN4426
STN442
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN4426 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, notebook computer power management
and other battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
½
PART MARKING
SOP-8
20V/8.0A, R
DS(ON)
= 28mΩ (Typ.)
@V
GS
= 4.5V
20V/7.0A, R
DS(ON)
= 36mΩ
@V
GS
= 2.5V
20V/3.0A, R
DS(ON)
= 42mΩ
@V
GS
= 1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4426
SYA
S: Subcontractor Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
STANSON [ STANSON TECHNOLOGY ]
