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STN4426 参数 Datasheet PDF下载

STN4426图片预览
型号: STN4426
PDF下载: 下载PDF文件 查看货源
内容描述: STN4426是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 [STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 6 页 / 362 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN4426  
N Channel Enhancement Mode MOSFET  
8.0A  
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )  
Parameter  
Symbol  
Typical  
20  
Unit  
Drain-Source Voltage  
VDSS  
V
V
Gate-Source Voltage  
VGSS  
ID  
±12  
TA=25  
7.4  
6.0  
Continuous Drain Current (TJ=150  
Pulsed Drain Current  
)
A
TA=70  
IDM  
IS  
35  
A
Continuous Source Current (Diode Conduction)  
2.3  
A
TA=25℃  
2.5  
1.6  
Power Dissipation  
PD  
W
TA=70  
Operation Junction Temperature  
Storgae Temperature Range  
TJ  
-55/150  
-55/150  
80  
TSTG  
RθJA  
/W  
Thermal Resistance-Junction to Ambient  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STN4426 2009. V1