SM5009 series
Electrical Characteristics
5009AL× series
3V operation: V = 2.7 to 3.3V, V = 0V, Ta = −40 to 85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
typ
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, I = 8mA
OH
V
V
V
V
OH
V
Q: Measurement cct 1, I = 8mA
OL
–
–
0.4
–
OL
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
DD
IL
Q: Measurement cct 2, INHN = LOW, V = V
OH
–
10
10
17
11
9
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, INHN = LOW, V = V
OL
–
–
SS
CF5009AL1
CF5009AL2
CF5009AL3
CF5009AL4
CF5009AL5
CF5009AL6
SM5009AL1S
SM5009AL2S
SM5009AL3S
SM5009AL4S
SM5009AL5S
SM5009AL6S
–
8
–
5
INHN = open, Measurement cct 3,
load cct 2, C = 15pF,
–
4
L
40MHz crystal oscillator
–
3
7
–
3
6
–
2
5
Current consumption
I
mA
DD
–
8
17
11
9
–
5
INHN = open, Measurement cct 3,
load cct 2, C = 15pF,
–
4
L
40MHz crystal oscillator,
–
3
7
Ta = –20 to +80°C
–
3
6
–
2
5
Standby current
I
INHN = V , Measurement cct 3
SS
–
2
5
ꢀA
MΩ
kΩ
Ω
ST
R
Measurement cct 4, V = 3V, INHN = V
DD SS
0.6
40
–
–
12
200
–
UP1
INHN pull-up resistance
R
Measurement cct 4, V = 3V, INHN = 2.1V
DD
–
UP2
Negative resistance
Feedback resistance
−R
V
= 3V, Ta = 25°C, 40MHz
DD
–200
–
L
R
Measurement cct 5
0.4
5.58
9.3
1.1
6.42
10.7
MΩ
pF
f
C
6
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
pF
D
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