SM5009 series
5009AN×/CN× series
3V operation: V = 2.7 to 3.3V, V = 0V, Ta = −20 to 80°C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
max
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2
2.2
–
–
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
HIGH-level output voltage
V
Q: Measurement cct 1, I = 8mA
OH
V
OH
2.1
–
–
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, I = 8mA
OL
–
2.0
–
–
–
–
–
–
8
5
4
3
3
2
7
0.4
–
V
V
V
OL
V
INHN
INHN
IH
V
0.3
10
10
17
11
9
IL
Q: Measurement cct 2, INHN = LOW, V = V
OH
–
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, INHN = LOW, V = V
OL
–
SS
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
–
–
INHN = open, Measurement cct 3,
load cct 2, C = 15pF,
–
L
40MHz crystal oscillator
–
7
Current consumption
I
mA
–
6
DD
–
5
INHN = open, Measurement cct 3,
load cct 2, C = 15pF,
–
15
L
30MHz crystal oscillator,
SM5009CN2S, CF5009CN2
–
4
9
Ta = –10 to +70°C
INHN pull-up resistance
Negative resistance
Feedback resistance
R
Measurement cct 4, V = 3V, INHN = V
DD
40
–
–
–100
–
200
–
kΩ
Ω
UP
SS
−R
V
= 3V, Ta = 25°C, 40MHz
DD
L
R
Measurement cct 5
0.4
5.58
9.3
1.1
MΩ
pF
f
C
6
6.42
10.7
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
pF
D
SEIKO NPC CORPORATION —8
SEIKO [ SEIKO EPSON CORPORATION ]
