01/99
B-11
2N4338, 2N4339
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Audio Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
– 50 V
50 mA
300 mW
2mW/°C
¥ Small Signal Amplifiers
¥ Voltage-Controlled Resistors
¥ Current Limiters & Regulators
Continuous Device Power Dissipation
Power Derating (to 175°C)
At 25°C free air temperature:
Static Electrical Characteristics
2N4338
2N4339
Process NJ16
Test Conditions
I = – 1 µA, V = ØV
Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 50
– 50
V
– 100 pA
– 100 nA
(BR)GSS
G
DS
– 100
– 100
V
= – 30V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 30V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
V
– 0.3 – 1 – 0.6 – 1.8
V
V
= 15V, I = 0.1 µA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
0.2 0.6 0.5 1.5 mA
V
= 15V, V = ØV
DSS
DS
GS
0.05
(– 5)
0.05 nA
Drain Cutoff Current
I
V
= 15V, V = ( )
D(OFF)
DS
GS
(– 5)
V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
2500
1700
Ω
V
= ØV, I = ØA
f = 1 kHz
f = 1 kHz
ds(on)
GS
D
Common Source
Forward Transconductance
g
600 1800 800 2400 µS
V
= 15V, V = ØV
fs
DS
GS
Common Source Output Conductance
Common Source Input Capacitance
g
5
7
15
7
µS
pF
V
= 15V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS
GS
C
V
= 15V, V = ØV
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
3
1
3
1
pF
V
= 15V, V = ØV
f = 1 MHz
f = 1 kHz
rss
DS
GS
V
= 15V, V = ØV
DS
GS
Noise Figure
NF
dB
R = 1MΩ, BW = 200 Hz
G
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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