01/99
B-55
J203, J204
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
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¥ General Purpose Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
J203
J204
Process NJ16
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min
Typ Max Min
Typ Max Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 40
– 25
– 100
V
I = – 1µA, V = ØV
G DS
(BR)GSS
I
– 100 pA
V
= – 20V, V = ØV
GSS
GS DS
Gate Operating Current
I
– 10
– 10
1.2
pA
V
V
= 20V, I = I
DSS(min)
G
DG
D
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
– 2
4
– 10 – 0.3
– 2
3
V = 20V, I = 10 nA
DS D
GS(OFF)
I
20
0.2
mA
V
= 15V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
g
1500
500 1500
µS
V
= 20V, V = ØV
f = 1 kHz
fs
DS GS
Common Source Output Conductance
Common Source Input Capacitance
10
4
2.5
4
µS
pF
V
= 20V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS GS
C
V
= 20V, V = ØV
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
1
5
1
pF
V
= 20V, V = ØV
f = 1 MHz
f = 1 kHz
rss
DS GS
Equivalent Short Circuit Input
Noise Voltage
e¯
nV/√Hz
10
V
= 10V, V = ØV
GS
N
DS
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ203, SMPJ204
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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