B-56
01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Audio Amplifiers
¥ General Purpose Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 25 V
10 mA
360 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
3.27 mW/°C
J210
J211
Process NJ26L
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min
Typ Max Min
Typ Max Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 25
– 25
– 100
V
I = – 1µA, V = ØV
G DS
(BR)GSS
I
– 100 pA
V
= – 15V, V = ØV
GSS
GS DS
Gate Operating Current
I
– 10
– 10
pA
V
V
= 20V, I = 1 mA
G
DS D
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
– 1
2
– 3 – 2.5
– 4.5
20
V
= 15V, I = 1 nA
GS(OFF)
DS D
I
15
7
mA
V
= 15V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
g
4000
12000 6000
150
12000 µS
V
= 15V, V = ØV
f = 1 kHz
fs
DS GS
Common Source Output Conductance
Common Source Input Capacitance
200
µS
pF
V
= 15V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS GS
C
4
1
4
1
V
= 15V, V = ØV
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
pF
V
= 15V, V = ØV
f = 1 MHz
f = 1 kHz
rss
DS GS
Equivalent Short Circuit Input
Noise Voltage
e¯
nV/√Hz
10
10
V
= 15V, V = ØV
GS
N
DS
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ210, SMPJ211
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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