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FM24CL16B-G 参数 Datasheet PDF下载

FM24CL16B-G图片预览
型号: FM24CL16B-G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Kb的串行3V F-RAM存储器 [16Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 13 页 / 282 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24CL16B - 16Kb 3V I2C F-RAM  
Page  
Select  
Memory Operation  
Slave ID  
The FM24CL16B is designed to operate in a manner  
very similar to other 2-wire interface memory  
products. The major differences result from the  
higher performance write capability of FRAM  
technology. These improvements result in some  
differences between the FM24CL16B and a similar  
configuration EEPROM during writes. The complete  
operation for both writes and reads is explained  
below.  
1
0
1
0
A2  
A1  
A0  
R/W  
Figure 4. Slave Address  
Word Address  
Write Operation  
After the FM24CL16B (as receiver) acknowledges  
the slave ID, the master will place the word address  
on the bus for a write operation. The word address is  
the lower 8-bits of the address to be combined with  
the 3-bits of the page select to specify the exact byte  
to be written. The complete 11-bit address is latched  
internally.  
All writes begin with a slave ID then a word address  
as previously mentioned. The bus master indicates a  
write operation by setting the LSB of the Slave  
Address to a 0. After addressing, the bus master  
sends each byte of data to the memory and the  
memory generates an acknowledge condition. Any  
number of sequential bytes may be written. If the  
end of the address range is reached internally, the  
address counter will wrap from 7FFh to 000h.  
No word address occurs for a read operation, though  
the 3-bit page select is latched internally. Reads  
always use the lower 8-bits that are held internally in  
the address latch. That is, reads always begin at the  
address following the previous access. A random read  
address can be loaded by doing a write operation as  
explained below.  
Unlike other nonvolatile memory technologies, there  
is no write delay with FRAM. The entire memory  
cycle occurs in less time than a single bus clock.  
Therefore, any operation including read or write can  
occur immediately following a write. Acknowledge  
polling, a technique used with EEPROMs to  
determine if a write is complete is unnecessary and  
will always return a ‘ready’ condition.  
After transmission of each data byte, just prior to the  
acknowledge, the FM24CL16B increments the  
internal address latch. This allows the next sequential  
byte to be accessed with no additional addressing.  
After the last address (7FFh) is reached, the address  
latch will roll over to 000h. There is no limit on the  
number of bytes that can be accessed with a single  
read or write operation.  
An actual memory array write occurs after the 8th  
data bit is transferred. It will be complete before the  
acknowledge is sent. Therefore, if the user desires to  
abort a write without altering the memory contents,  
this should be done using start or stop condition  
prior to the 8th data bit. The FM24CL16B needs no  
page buffering.  
Data Transfer  
After all address information has been transmitted,  
data transfer between the bus master and the  
FM24CL16B can begin. For a read operation the  
device will place 8 data bits on the bus then wait for  
an acknowledge. If the acknowledge occurs, the next  
sequential byte will be transferred. If the  
acknowledge is not sent, the read operation is  
concluded. For a write operation, the FM24CL16B  
will accept 8 data bits from the master then send an  
acknowledge. All data transfer occurs MSB (most  
significant bit) first.  
The memory array can be write protected using the  
WP pin. Setting the WP pin to a high condition  
(VDD) will write-protect all addresses. The  
FM24CL16B will not acknowledge data bytes that  
are written to protected addresses. In addition, the  
address counter will not increment if writes are  
attempted to these addresses. Setting WP to a low  
state (VSS) will deactivate this feature.  
Figure 5 and 6 below illustrates both a single-byte  
and multiple-byte writes.  
Rev. 1.4  
Feb. 2011  
Page 5 of 13