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FM24C64C-G 参数 Datasheet PDF下载

FM24C64C-G图片预览
型号: FM24C64C-G
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kb的串行5V F-RAM存储器 [64Kb Serial 5V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 270 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24C64C  
Overview  
Two-wire Interface  
The FM24C64C is a serial FRAM memory. The  
memory array is logically organized as a 8,192 x 8 bit  
memory array and is accessed using an industry  
standard two-wire interface. Functional operation of  
the FRAM is similar to serial EEPROMs. The major  
difference between the FM24C64C and a serial  
EEPROM with the same pinout relates to its superior  
write performance.  
The FM24C64C employs a bi-directional two-wire  
bus protocol using few pins and little board space.  
Figure 2 illustrates a typical system configuration  
using the FM24C64C in a microcontroller-based  
system. The industry standard two-wire bus is  
familiar to many users but is described in this section.  
By convention, any device that is sending data onto  
the bus is the transmitter while the target device for  
this data is the receiver. The device that is controlling  
the bus is the master. The master is responsible for  
generating the clock signal for all operations. Any  
device on the bus that is being controlled is a slave.  
The FM24C64C always is a slave device.  
Memory Architecture  
When accessing the FM24C64C, the user addresses  
8,192 locations each with 8 data bits. These data bits  
are shifted serially. The 8,192 addresses are accessed  
using the two-wire protocol, which includes a slave  
address (to distinguish from other non-memory  
devices), and an extended 16-bit address. Only the  
lower 13 bits are used by the decoder for accessing  
the memory. The upper three address bits should be  
set to 0 for compatibility with larger devices in the  
future.  
The bus protocol is controlled by transition states in  
the SDA and SCL signals. There are four conditions:  
Start, Stop, Data bit, and Acknowledge. Figure 3  
illustrates the signal conditions that specify the four  
states. Detailed timing diagrams are shown in the  
Electrical Specifications section.  
The memory is read or written at the speed of the  
two-wire bus. Unlike an EEPROM, it is not  
necessary to poll the device for a ready condition  
since writes occur at bus speed. That is, by the time a  
new bus transaction can be shifted into the part, a  
write operation is complete. This is explained in more  
detail in the interface section below.  
VDD  
Rmin = 1.8 Kohm  
Rmax = tR/Cbus  
Microcontroller  
Users can expect several obvious system benefits  
from the FM24C64C due to its fast write cycle and  
high endurance as compared with EEPROM.  
However there are less obvious benefits as well. For  
example in a high noise environment, the fast-write  
operation is less susceptible to corruption than an  
EEPROM since it is completed quickly. By contrast,  
an EEPROM requiring milliseconds to write is  
vulnerable to noise during much of the cycle.  
SDA  
SCL  
SDA  
SCL  
FM24C64C  
A0 A1 A2  
FM24C64C  
A0 A1 A2  
Figure 2. Typical System Configuration  
Note that the FM24C64C contains no power  
management circuits other than a simple internal  
power-on reset. It is the user’s responsibility to  
ensure that VDD is within datasheet tolerances to  
prevent incorrect operation.  
Rev. 1.1  
June 2011  
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