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FM24C256-G 参数 Datasheet PDF下载

FM24C256-G图片预览
型号: FM24C256-G
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB串行FRAM存储器 [256Kb FRAM Serial Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 98 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24C256  
No  
Start  
S
Address  
Acknowledge  
By Master  
Stop  
Slave Address  
1
A
Data Byte  
Data  
1
P
By FM24C256  
Acknowledge  
Figure 7. Current Address Read  
No  
Acknowledge  
Start  
S
Address  
Acknowledge  
By Master  
Stop  
Slave Address  
1
A
Data Byte  
A
Data Byte  
1 P  
By FM24C256  
Acknowledge  
Data  
Figure 8. Sequential Read  
Start  
No  
Address  
Acknowledge  
Start  
Address  
By Master  
Stop  
S
Slave Address  
0
A
Address MSB  
A
Address LSB  
Acknowledge  
A
S
Slave Address  
1
A
Data Byte  
Data  
1 P  
By FM24C256  
Figure 9. Selective (Random) Read  
8 bytes per segment. Endurance can be optimized by  
ensuring frequently accessed data is located in  
different segments. Regardless, FRAM read and  
write endurance is effectively unlimited at the 1MHz  
two-wire speed. Even at 30 accesses per second to  
the same segment, 10 years time will elapse before  
10 billion endurance cycles occur.  
Endurance  
A FRAM internally operates with a read and restore  
mechanism. Therefore, endurance cycles are applied  
for each read and write access. The FRAM  
architecture is based on an array of rows and  
columns. Rows (A14-A6) are subdivided into 8  
segments (A5-A3). Each access causes an endurance  
cycle for a row segment. In the FM24C256, there are  
Rev 3.1  
May 2005  
Page 7 of 12