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FM24C256-G 参数 Datasheet PDF下载

FM24C256-G图片预览
型号: FM24C256-G
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB串行FRAM存储器 [256Kb FRAM Serial Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 98 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24C256  
Addressing Overview  
Write Operation  
After the FM24C256 (as receiver) acknowledges the  
device address, the master can place the memory  
address on the bus for a write operation. The address  
requires two bytes. The first is the MSB (upper byte).  
Since the device uses only 15 address bits, the value  
of the upper bits is a “don’t care”. Following the  
MSB is the LSB (lower byte) with the remaining  
eight address bits. The address value is latched  
internally. Each access causes the latched address  
value to be incremented automatically. The current  
address is the value that is held in the latch, either a  
newly written value or the address following the last  
access. The current address will be held as long as  
power remains or until a new value is written. Reads  
always use the current address. A random read  
address can be loaded by beginning a write operation  
as explained below.  
All writes begin with a device address, then a  
memory address. The bus master indicates a write  
operation by setting the LSB of the device address  
to a 0. After addressing, the bus master sends each  
byte of data to the memory and the memory  
generates an acknowledge condition. Any number of  
sequential bytes may be written. If the end of the  
address range is reached internally, the address  
counter will wrap from 7FFFh to 0000h.  
Unlike other nonvolatile memory technologies,  
there is essentially no write delay with FRAM.  
Since the read and write access times of the  
underlying memory are the same, the user  
experiences no delay on the bus. The entire memory  
cycle occurs in less time than a single bus clock.  
Therefore, any operation including a read or write  
can occur immediately following  
Acknowledge polling, technique used with  
EEPROMs to determine if a write has completed is  
a
write.  
After transmission of each data byte, just prior to the  
acknowledge, the FM24C256 increments the internal  
address latch. This allows the next sequential byte to  
be accessed with no additional addressing externally.  
After the last address (7FFFh) is reached, the address  
latch will roll over to 0000h. There is no limit to the  
number of bytes that can be accessed with a single  
read or write operation.  
a
unnecessary and will always return  
condition.  
a ready  
Internally, an actual memory write occurs after the  
8th data bit is transferred. It will be complete before  
the Acknowledge is sent. Therefore, if the user  
desires to abort a write without altering the memory  
contents, this should be done using a Start or Stop  
condition prior to the 8th data bit. The FM24C256  
uses no page buffering.  
Data Transfer  
After the address information has been transmitted,  
data transfer between the bus master and the  
FM24C256 can begin. For a read operation the  
FM24C256 will place 8 data bits on the bus then wait  
for an Acknowledge from the master. If the  
Acknowledge occurs, the FM24C256 will transfer the  
next sequential byte. If the Acknowledge is not sent,  
the FM24C256 will end the read operation. For a  
write operation, the FM24C256 will accept 8 data  
bits from the master then send an acknowledge. All  
data transfer occurs MSB (most significant bit) first.  
The memory array can be write protected using the  
WP pin. Pulling the WP pin high will write-protect  
all addresses. The FM24C256 will not acknowledge  
data bytes that are written when WP is active. In  
addition, the address counter will not increment if  
writes are attempted to these addresses. Setting WP  
low will deactivate this feature. WP is internally  
pulled down. The state of WP should remain stable  
from the Start command until the address is  
complete.  
Memory Operation  
The FM24C256 is designed to operate in a manner  
very similar to other 2-wire interface memory  
products. The major differences result from the  
higher performance write capability of FRAM  
technology. These improvements result in some  
differences between the FM24C256 and a similar  
configuration EEPROM during writes. The complete  
operation for both writes and reads is explained  
below.  
Figure 5 and 6 below illustrate both a single-byte  
and multiple-write.  
Rev 3.1  
May 2005  
Page 5 of 12