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FM1608-120-S 参数 Datasheet PDF下载

FM1608-120-S图片预览
型号: FM1608-120-S
PDF下载: 下载PDF文件 查看货源
内容描述: 64KB字节宽度FRAM存储器 [64Kb Bytewide FRAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 106 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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Ramtron  
FM1608  
Figure 3. Row and Column Organization  
qualified using HAST – highly accelerated stress test.  
This requires 120º C at 85% Rh, 24.4 psia at 5.5V bias.  
3. System reliability  
Data integrity must be in question when using a  
battery-backed SRAM. They are inherently  
vulnerable to shock and vibration. If the battery  
contact comes loose, data will be lost. In addition a  
negative voltage, even a momentary undershoot, on  
any pin of a battery-backed SRAM can cause data  
loss. The negative voltage causes current to be drawn  
directly from the battery. These momentary short  
circuits can greatly weaken a battery and reduce its  
capacity over time. In general, there is no way to  
monitor the lost battery capacity. Should an  
undershoot occur in a battery backed system during a  
power down, data can be lost immediately.  
Applications  
As the first truly nonvolatile RAM, the FM1608 fits  
into many diverse applications. Clearly, its monolithic  
nature and high performance make it superior to  
battery-backed SRAM in most every application. This  
applications guide is intended to facilitate the  
transition from BBSRAM to FRAM. It is divided into  
two parts. First is a treatment of the advantages of  
FRAM memory compared with battery-backed  
SRAM. Second is a design guide, which highlights  
the simple design considerations that should be  
reviewed in both retrofit and new design situations.  
4. Space  
Certain disadvantages of battery-backed, such as  
susceptibility to shock, can be reduced by using the  
old fashioned DIP module. However, this alternative  
takes up board space, add height, and dictates  
through-hole assembly. FRAM offers a true surface-  
mount solution that uses 25% of the board space.  
No multi-piece assemblies no connectors, and no  
modules.  
available!  
A real nonvolatile RAM is finally  
FRAM Advantages  
Although battery-backed SRAM is a mature and  
established solution, it has numerous weaknesses.  
These stem, directly or indirectly from the presence of  
the battery. FRAM uses an inherently nonvolatile  
storage mechanism that requires no battery. It  
therefore eliminates these weaknesses. The major  
considerations in upgrading to FRAM are as follows.  
Direct Battery Issues  
5. Field maintenance  
Batteries, no matter how mature, are a built-in  
maintenance problem. They eventually must be  
replaced. Despite long life projections, it is impossible  
to know if any individual battery will last considering  
all of the factors that can degrade them.  
Construction Issues  
1. Cost  
6. Environmental  
The cost of both the component and the  
manufacturing overhead of battery-backed SRAM is  
high. FRAM, with its monolithic construction is  
inherently a lower cost solution. In addition, there is  
no ‘built-in’ rework step required for battery  
attachment when using surface mount parts.  
Therefore assembly is streamlined and more cost  
effective. In the case of DIP battery-backed modules,  
the user is constrained to through-hole assembly  
techniques and a board wash using no water.  
Lithium batteries are widely regarded as an  
environmental problem. They are a potential fire  
hazard and proper disposal can be a burden. In  
addition, shipping of lithium batteries may be  
restricted.  
7. Style!  
Backing up an SRAM with a battery is an old-  
fashioned approach. In many cases, such modules are  
the only through-hole component in sight. FRAM is  
the latest memory technology and it is changing the  
way systems are designed.  
2. Humidity  
A typical battery-backed SRAM module is qualified at  
60º C, 90% Rh, no bias, and no pressure. This is  
because the multi-component assemblies are  
vulnerable to moisture, not to mention dirt. FRAM is  
FRAM is nonvolatile and writes fast -- no battery  
required!  
28 July 2000  
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