Ramtron
FM1608
Read Cycle AC Parameters TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
tCE
tCA
tRC
tPC
Parameter
Min
Max
120
10,000
Units
ns
ns
ns
ns
Notes
Chip Enable Access Time ( to data valid)
Chip Enable Active Time
Read Cycle Time
Precharge Time
Address Setup Time
120
180
60
0
tAS
ns
tAH
tOE
tHZ
Address Hold Time
10
ns
ns
ns
ns
Output Enable Access Time
Chip Enable to Output High-Z
Output Enable to Output High-Z
10
15
15
1
1
tOHZ
Write Cycle AC Parameters TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
tCA
tCW
tWC
tPC
Parameter
Min
120
120
180
60
0
10
40
40
Max
10,000
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Chip Enable Active Time
Chip Enable to Write High
Write Cycle Time
Precharge Time
tAS
Address Setup Time
Address Hold Time
Write Enable Pulse Width
Data Setup
tAH
tWP
tDS
tDH
tWZ
tWX
tHZ
Data Hold
0
Write Enable Low to Output High Z
Write Enable High to Output Driven
Chip Enable to Output High-Z
Write Setup
15
15
1
1
1
2
2
10
tWS
tWH
0
0
Write Hold
Notes
1
2
This parameter is periodically sampled and not 100% tested.
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Power Cycle Timing TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
tPU
tPD
Parameter
VDD Min to First Access Start
Last Access Complete to VDD Min
Min
Units Notes
ms
ms
1
0
Capacitance TA = 25° C , f=1.0 MHz, VDD = 5V
Symbol
CI/O
CIN
Parameter
Input Output Capacitance
Input Capacitance
Max
Units
pF
pF
Notes
8
6
28 July 2000
8/12
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
