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FM1110-QG 参数 Datasheet PDF下载

FM1110-QG图片预览
型号: FM1110-QG
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory Circuit, PQCC16]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 8 页 / 286 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM1110-QG的Datasheet PDF文件第1页浏览型号FM1110-QG的Datasheet PDF文件第2页浏览型号FM1110-QG的Datasheet PDF文件第3页浏览型号FM1110-QG的Datasheet PDF文件第5页浏览型号FM1110-QG的Datasheet PDF文件第6页浏览型号FM1110-QG的Datasheet PDF文件第7页浏览型号FM1110-QG的Datasheet PDF文件第8页  
FM1110 NV Quad State Saver  
Electrical Specifications  
Absolute Maximum Ratings  
Symbol  
VDD  
VIN  
Description  
Power Supply Voltage with respect to VSS  
Voltage on any signal pin with respect to VSS  
Ratings  
-1.0V to +7.0V  
-1.0V to +7.0V  
and VIN < VDD+1.0V  
TSTG  
TLEAD  
VESD  
Storage temperature  
Lead temperature (Soldering, 10 seconds)  
Electrostatic Discharge Voltage  
-55C to + 125C  
300C  
- Human Body Model (JEDEC Std JESD22-A114-B)  
- Charged Device Model (JEDEC Std JESD22-C101-A)  
- Machine Model (JEDEC Std JESD22-A115-A)  
Package Moisture Sensitivity Level  
4kV  
1kV  
200V  
MSL-1  
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this  
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.  
DC Operating Conditions (TA = -40C to + 85C, VDD = 4.5V to 5.5V unless otherwise specified)  
Symbol Parameter  
Min  
4.5  
Typ  
5.0  
-
Max  
5.5  
3
Units  
Notes  
VDD  
ISB  
Power Supply Voltage  
Standby Current  
1
2
3
3
CPD  
ILI  
Power Dissipation Capacitance  
Input Leakage Current  
ILO  
Output Leakage Current  
Input Low Voltage  
Input tage  
Outolta
@ IA  
0.3 D  
VDD 3  
VIL  
VIH  
VO
0.3  
7 VDD  
V
-
V
utltage  
@ I(V4.5
@ I(VDD=4.5V)  
Inpusteresis (CLK, EN)  
-
-
0.4  
0.8  
V
V
150  
mV  
4
Not
1. CLK = VSS, all other inputs at VDD or VSS.  
2. To calculate device power dissipation, PD = CPD*VDD2*fi + CL*VDD2*fo, where fi is the input clk freq, fo is the output freq,  
and CL is the output load capacitance. Active current IDD may be calculated as IDD = CPD*VDD*fi, assuming outputs are  
floating.  
3. VIN or VOUT = VSS to VDD  
.
4. This parameter is characterized but not tested.  
Rev. 4.0  
Oct 2012  
Page 4 of 8